代理產線

BGA8U1BN6

 2017-09-06

【基本資料】

【產品特性】

• Insertion power gain: 12.2 dB
• Insertion Loss in bypass mode: 7.2 dB
• Low noise figure: 2.2dB
• Low current consumption: 4.3mA
• Operating frequencies: 5150 - 5850 MHz
• Multi-state control: OFF-, bypass- and high gain-Mode
• Supply voltage: 1.6 V to 3.1 V

【產品應用】

The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 5150 MHz to 5850 MHz. The LNA provides 12.2 dB gain and 2.2 dB noise figure at a current consumption of 4.3mA. In bypass mode the LNA provides an insertion loss of 7.2 dB.
The BGA8U1BN6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

【文字介紹】

• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ohm
• Low external component count
• 1kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package