代理產線

BGA8V1BN6

 2017-02-15

【基本資料】

【產品特性】

• Insertion power gain: 13.2 dB
• Insertion Loss in bypass mode: 5.8 dB
• Low noise figure: 1.25dB
• Low current consumption: 4.0mA
• Operating frequencies: 3.4 - 3.8 GHz
• Multi-state control: OFF-, bypass- and high gain-Mode
• Supply voltage: 1.6 V to 3.1 V

【產品應用】

The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.4 GHz to 3.8 GHz. The LNA provides 13.2 dB gain and 1.25 dB noise figure at a current consumption of 4.0mA. In bypass mode the LNA provides an insertion loss of 5.8 dB.
The BGA8V1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

【文字介紹】

• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
• B9HF Silicon Germanium technology
• RF input and RF output internally matched to 50 Ohm
• No external SMD components necessary
• 1kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package