新聞中心

品佳集團力推 英飛凌低雜訊放大器與多工器(LTE LNA & LMM)於智能手機應用

 2017-02-15

【方案介紹】
英飛凌低雜訊放大器與多工器 (LTE LNA & LMM) 簡化了射頻前端設計,從而縮小尺寸, 優化成本, 提高系統性能與加快上市時間, 並已經被Mediatek Phase 5所採用.

【方案特色】
LTE LNA By-Pass mode在強訊號狀況下, 可選擇關閉, 預防收發器(transceiver)飽和, 達到最好的接收效果. LMM 元件結合了離散射頻元件和前端模組 (FEM) 的優點,因此是下行載波聚合 (DL-CA) 和上行載波聚合 (UL-CA) 的理想選擇。

• 增加集成式 LNA 和開關價值
• MIPI 控制的佈線線路數減少多達 80%
• 尺寸最高縮減 50%
• 最多節省 60% 系統元件成本

【系統方塊圖】
LMM射頻前端設計


LTE LNA By-Pass mode 在3G/4G收發器設計 


【規格說明】
Single-band 3G/4G MMIC LNAs with Bypass Function



LTE LNA By-Pass mode 


BGA8V1BN6
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end.


In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption.

Features: 
• Operating frequencies: 3.4 - 3.8 GHz
• Insertion power gain: 13.2 dB
• Insertion Loss in bypass mode: 5.8 dB
• Low noise figure: 1.25 dB
• Low current consumption: 4.0mA
• Multi-state control: OFF-, bypass- and high gain-Mode
• Ultra small TSNP-6-2 leadless package
• RF input and RF output internally matched to 50 Ohm
• No external components necessary


LMM低雜訊放大器多工器-BGM17HBA15

Features: 
• Wideband operating frequencies: 1805 - 2690 MHz
• Insertion power gain: 13.5 dB
• Insertion loss in bypass mode: 3.8 dB
• Noise figure: 1.8 dB
• Low current consumption: 5 mA
• Multi-state control: OFF-, Bypass- and Gain-Mode
• Small ATSLP leadless package



【應用範圍
• Smartphones

• Tablets

若需任何產品詳情, 請洽以下品佳集團 Infineon 產品線企劃人員, 
或造訪品佳集團網站 http://www.sacg.com.tw/ , 謝謝!